Влияние комбинированного ионного и электронного облучения на полосу люминесценции 2 eV в гексагональном нитриде бора

Point defects in wide-bandgap semiconductors, particular hexagonal boron nitride, are promising candidates for single-photon emitters, used quantum informatics. We investigated cathodoluminescence of ion beam induced as well the effect prolonged electron irradiation on intensity luminescence. It has been shown that both band-to-band emission and defect related decreased after irradiation, during subsequent 2 eV luminescence band increased, whereas other bands remained unchanged.